Special Issue on Fabrication Process and Application of Crystal Substrates to Realize Next-Generation Green Devices
Guest Editor, Toshiro Doi (Kyushu University)

Preface

Review Report

Current Status and Future Prospects of GaN Substrates for Green Devices (SM0909)
Toshiro Doi, p.141
[Abstract (PDF File) | Full text (PDF File)]

Research Reports

Current Status and Future Prospects of Ammonothermal Bulk GaN Growth (SM0910)
Tadao Hashimoto, Edward Letts and Sierra Hoff, p.155
[Abstract (PDF File) | Full text (PDF File)]

Growth and Evaluation of Bulk GaN Crystals Grown on a Point Seed Crystal by Ba-Added Na Flux Method (SM0911)
Hiroki Imabayashi, Kosuke Murakami, Daisuke Matsuo, Yuma Todoroki, Hideo Takazawa, Akira Kitamoto, Mihoko Maruyama, Mamoru Imade, Masashi Yoshimura and Yusuke Mori, p.165
[Abstract (PDF File) | Full text (PDF File)]

Assessment of Stacking Faults in Silicon Carbide Crystals (SM0912)
Hidekazu Yamamoto, p.177
[Abstract (PDF File) | Full text (PDF File)]

Surface Treatment for GaN Substrate - Comparison of Chemical Mechanical Polishing and Inductively Coupled Plasma Dry Etching - (SM0913)
Hideo Aida, Hidetoshi Takeda, Natsuko Aota, Seong-Woo Kim and Koji Koyama, p.189
[Abstract (PDF File) | Full text (PDF File)]

Growth of Al_xGa_1-xN Structures on 8 in. Si(111) Substrates (SM0914)
Balakrishnan Krishnan, Seungjae Lee, Hongwei Li, Jie Su, Dong Lee and Ajit Paranjpe, p.205
[Abstract (PDF File) | Full text (PDF File)]

Evaluation of GaN Substrate for Vertical GaN Power Device Applications (SM0915)
Tetsu Kachi and Tsutomu Uesugi, p.219
[Abstract (PDF File) | Full text (PDF File)]