Special Issue on WUPP for III-nitrides
Guest Editor, Hideo Aida (Namiki Precision Jewel Co., Ltd./Kyushu University)

Preface

Research Reports

Ammonothermal Bulk GaN Growth and Its Processing (SM1006)
Tadao Hashimoto, Edward Letts, Daryl Key, Keith Male, Matthew Michaels and Sierra Hoff, p.385
[Abstract (PDF File) | Full text (PDF File)]

Sapphre Substrate Processing for High-Performance GaN-Based Light-Emitting Diodes —Micropatterning of Sapphire Substrates and Its Effect on Light Enhancement in GaN-Based Light-Emitting Diodes— (SM1007)
Natsuko Aota, Hideo Aida, Yutaka Kimura and Yuki Kawamata, p.393
[Abstract (PDF File) | Full text (PDF File)]

Novel Chemical Mechanical Polishing/Plasma-Chemical Vaporization Machining (CMP/P-CVM) Combined Processing of Hard-to-Process Crystals Based on Innovative Concepts (SM1008)
Toshiro K. Doi, Yasuhisa Sano, Syuhei Kurowaka, Hideo Aida, Osamu Ohnishi, Michio Uneda and Koki Ohyama, p.403
[Abstract (PDF File) | Full text (PDF File)]

Micro-Laser-Assisted Machining: The Future of Manufacturing Ceramics and Semiconductors (SM1009)
Deepak Ravindra and John Patten, p.417
[Abstract (PDF File) | Full text (PDF File)]

Dependence of GaN Removal Rate of Plasma Chemical Vaporization Machining on Mechanically Introduced Damage (SM1010)
Yasuhisa Sano, Toshiro K. Doi, Syuhei Kurokawa, Hideo Aida, Osamu Ohnishi, Michio Uneda, Kousuke Shiozawa, Yu Okada and Kazuto Yamauchi, p.429
[Abstract (PDF File) | Full text (PDF File)]

Influence of Pad Surface Asperity on Removal Rate in Chemical Mechanical Polishing of Large-Diameter Silicon Wafer Applied to Substrate of GaN-Based LEDs (SM1011)
Michio Uneda, Yuki Maeda, Kazutaka Shibuya, Yoshio Nakamura, Daizo Ichikawa, Kiyomi Fujii and Ken-ichi Ishikawa, p.435
[Abstract (PDF File) | Full text (PDF File)]

General Contributed Paper

Design and Trial Production of Microstructured ZnO Gas Sensor (SM1012)
Qiulin Tan, Chao Li, Wenyi Liu, Chenyang Xue, Wendong Zhang, Jun Liu, Xiaxia Ji and Jijun Xiong, p.447
[Abstract (PDF File) | Full text (PDF File)]